Manufacturer Part Number
FQD3N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET in a TO-252 (D-Pak) package.
Product Features and Performance
600V drain-to-source voltage
4Ω maximum on-resistance at 1.2A, 10V
4A continuous drain current at 25°C
Input capacitance of 565pF at 25V
50W maximum power dissipation
Product Advantages
Excellent voltage handling capability
Low on-resistance for low conduction losses
High current rating for efficient power switching
Small package size for compact design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 3.4Ω @ 1.2A, 10V
Continuous Drain Current (Id): 2.4A at 25°C
Input Capacitance (Ciss): 565pF @ 25V
Quality and Safety Features
ROHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-252 (D-Pak) package
Surface mount
Application Areas
Switching power supplies
Motor drives
Industrial and household appliances
Product Lifecycle
Current production
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage capability
Low on-resistance for efficient power conversion
High current rating for demanding applications
Small package size for compact designs
Wide operating temperature range
RoHS compliance for environmental considerations
