Manufacturer Part Number
T2N7002AK,LM
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Introduction
N-channel enhancement-mode power MOSFET
Product Features and Performance
Wide operating temperature range up to 150°C
Low on-resistance for efficient power conversion
Low gate charge for fast switching
Low input capacitance for high-frequency operation
Product Advantages
Improved energy efficiency
Reduced power loss
Fast switching capabilities
Compact size for space-constrained designs
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 3.9Ω @ 100mA, 10V
Continuous Drain Current (Id): 200mA @ 25°C
Input Capacitance (Ciss): 17pF @ 10V
Power Dissipation (Pd): 320mW
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Power supplies
Motor drives
Lighting controls
Battery management systems
Industrial and consumer electronics
Product Lifecycle
This product is an active and available part. No discontinuation or replacement is planned.
Key Reasons to Choose This Product
Excellent energy efficiency and low power loss
Fast switching capabilities for high-frequency operation
Compact size and surface mount design for space-constrained applications
Reliable operation up to 150°C junction temperature
RoHS3 compliance for environmental safety