Manufacturer Part Number
STW13NB60
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET in a TO-247-3 package
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 540mΩ @ 6.5A, 10V
High continuous drain current of 13A at 25°C case temperature
Low gate charge of 82nC @ 10V
Wide operating temperature range up to 150°C
Product Advantages
Efficient power conversion
High power density
Robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 540mΩ @ 6.5A, 10V
Continuous Drain Current (Id): 13A @ 25°C
Input Capacitance (Ciss): 2600pF @ 25V
Power Dissipation (Ptot): 190W @ 25°C case temperature
FET Type: N-Channel
Quality and Safety Features
RoHS non-compliant
Through-hole mounting
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is still in active production and availability. No replacement or upgrade information is currently available.
Key Reasons to Choose
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Robust design for reliable operation
Wide operating temperature range
Suitable for a variety of power electronics applications