Manufacturer Part Number
STW13NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
500V drain-to-source voltage
320mΩ maximum on-resistance
12A continuous drain current
-55°C to 150°C operating temperature range
Low input capacitance of 960pF
100W maximum power dissipation
Product Advantages
Improved energy efficiency
Robust design for high-voltage applications
Reliable performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 320mΩ
Continuous Drain Current (Id): 12A
Input Capacitance (Ciss): 960pF
Power Dissipation (Tc): 100W
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable mounting
Compatibility
Suitable for various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available
No known plans for discontinuation
Upgrades and alternatives may be available
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust design for harsh environments
Reliable operation across wide temperature range
RoHS3 compliance for environmentally-friendly use