Manufacturer Part Number
STW13009
Manufacturer
STMicroelectronics
Introduction
Power Transistor, NPN Bipolar Junction Transistor (BJT)
Product Features and Performance
High power handling capability up to 125W
Wide collector-emitter breakdown voltage range up to 400V
High collector current rating up to 12A
Low collector-emitter saturation voltage of 2.5V @ 3A, 12A
Suitable for high-power switching and amplification applications
Product Advantages
Robust and reliable design
Optimized for high-power operations
Excellent thermal management
Compact and easy to mount TO-247-3 package
Key Technical Parameters
Power Rating: 125W
Collector-Emitter Breakdown Voltage: 400V
Collector Current: 12A
DC Current Gain: 15 min. @ 5A, 5V
Collector-Emitter Saturation Voltage: 2.5V @ 3A, 12A
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
High-power switching and amplification circuits
Motor drives
Power supplies
Industrial equipment
Automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available as needed
Key Reasons to Choose
Exceptional power handling capability
Wide operating voltage and current range
Reliable and robust design
Optimized for high-power applications
Compact and easy to integrate TO-247-3 package
RoHS3 compliance for environmental compatibility
