Manufacturer Part Number
STU8NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET device
Product Features and Performance
Operates at high voltage up to 500 V
Supports continuous drain current up to 5 A at 25°C
Very low on-resistance of 790 mΩ at 2.5 A, 10 V
Fast switching with low gate charge of 14 nC at 10 V
Wide operating temperature range up to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
Reliable high-voltage operation
Compact through-hole package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500 V
Gate-to-Source Voltage (Vgs): ±25 V
On-Resistance (Rds(on)): 790 mΩ @ 2.5 A, 10 V
Continuous Drain Current (Id): 5 A @ 25°C
Input Capacitance (Ciss): 364 pF @ 50 V
Power Dissipation (Tc): 45 W
Quality and Safety Features
RoHS3 compliant
Industrially qualified and reliable
Compatibility
Compatible with various high-voltage, high-current applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement and upgrade options may be available
Key Reasons to Choose
Excellent power efficiency and performance
Reliable high-voltage operation
Compact and easy to integrate
Wide operating temperature range
Industrially qualified and RoHS3 compliant