Manufacturer Part Number
STU9HN65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET for high-voltage, high-power switching applications
Product Features and Performance
650V Drain-Source Voltage
5A Continuous Drain Current
820mΩ On-Resistance
325pF Input Capacitance
5nC Gate Charge
Wide Operating Temperature Range up to 150°C
Product Advantages
Excellent switching performance
High power density
Robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 820mΩ
Continuous Drain Current (Id): 5.5A
Input Capacitance (Ciss): 325pF
Gate Charge (Qg): 11.5nC
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent switching performance for high-voltage, high-power applications
Robust design with wide operating temperature range
High power density for compact system designs
RoHS3 compliance for environmental sustainability