Manufacturer Part Number
STU8N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Continuous Drain Current (Id): 6A @ 25°C
On-state Resistance (Rds(on)): 950 mΩ @ 3A, 10V
Input Capacitance (Ciss): 450 pF @ 100 V
Power Dissipation: 110W @ Tc
Gate Charge (Qg): 16.5 nC @ 10 V
Product Advantages
High voltage rating
Low on-state resistance
Fast switching performance
Key Technical Parameters
MOSFET Technology: N-Channel
Package: TO-251 (IPAK)
Operating Temperature: -55°C to 150°C
Gate-Source Voltage (Vgs): ±30V
Quality and Safety Features
RoHS Compliant (ROHS3)
Suitable for safety-critical applications
Compatibility
Compatible with various electronic circuits and power systems
Application Areas
Power supplies
Motor drives
Inverters
Industrial controls
Product Lifecycle
Active product
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling capability
Reliable high-voltage operation
Efficient switching performance
Suitable for harsh environmental conditions
Compliance with safety and environmental standards
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