STU6N65M2 - STMicroelectronics

Manufacturer Part Number

STU6N65M2

Manufacturer

STMicroelectronics

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

650V Drain to Source Voltage

35Ω Rds On (Max) @ 2A, 10V

4A Continuous Drain Current (Tc)

226pF Input Capacitance (Max) @ 100V

60W Power Dissipation (Max)

-55°C ~ 150°C Operating Temperature

Product Advantages

RoHS3 Compliant

TO-251 (IPAK) Package

MDmesh Series

Key Technical Parameters

Vgs (Max): ±25V

Vgs(th) (Max) @ 250A: 4V

Gate Charge (Qg) (Max) @ 10V: 9.8nC

Drive Voltage (Max Rds On, Min Rds On): 10V

Quality and Safety Features

Complies with RoHS3 Directive

Compatibility

Through Hole Mounting Type

Application Areas

Suitable for a wide range of power applications

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose this Product

High voltage, low Rds(on) performance

Compact TO-251 (IPAK) package

RoHS3 compliance

Wide operating temperature range

Suitable for various power applications