Manufacturer Part Number
STU6N65K3
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET transistor
Designed for high-performance power conversion applications
Product Features and Performance
Drain-to-Source Voltage (Vdss) up to 650V
On-state Resistance (Rds(on)) as low as 1.3Ω
Continuous Drain Current (Id) up to 5.4A at 25°C
Junction Temperature (Tj) up to 150°C
Fast switching speed
Low gate charge (Qg) of 33nC
Product Advantages
Excellent power efficiency
High-voltage operation
Compact TO-251 (IPAK) package
Suitable for high-power density designs
Key Technical Parameters
Vdss: 650V
Rds(on): 1.3Ω
Id: 5.4A
Tj: 150°C
Qg: 33nC
Quality and Safety Features
RoHS3 compliant
Meets safety and reliability standards
Compatibility
Compatible with various high-power, high-voltage applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and high-voltage operation
Compact and thermally efficient package
Suitable for high-power density designs
Meets safety and reliability standards
Availability of replacement and upgrade options