Manufacturer Part Number
STU7N60M2
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
TO-251 (IPAK) Package
Through Hole Mounting
MDmesh II Plus Series
N-Channel MOSFET
600V Drain to Source Voltage
±25V Gate to Source Voltage
950mOhm On-Resistance @ 2.5A, 10V
5A Continuous Drain Current @ 25°C
271pF Input Capacitance @ 100V
60W Power Dissipation
4V Gate Threshold Voltage @ 250A
8nC Gate Charge @ 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
Improved efficiency and reduced power losses
Reliable high-voltage operation
Suitable for various power conversion applications
Key Technical Parameters
Drain to Source Voltage
Gate to Source Voltage
On-Resistance
Continuous Drain Current
Input Capacitance
Power Dissipation
Gate Threshold Voltage
Gate Charge
Quality and Safety Features
ROHS3 Compliant
Compatibility
TO-251 (IPAK) Package
Application Areas
Power conversion
Motor drives
Switched-mode power supplies
Industrial electronics
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent high-voltage performance
Low on-resistance for improved efficiency
Suitable for a wide range of power conversion applications
Reliable operation across a wide temperature range
Compact and easy to integrate TO-251 (IPAK) package