STQ2NK60ZR-AP - STMicroelectronics

Manufacturer Part Number

STQ2NK60ZR-AP

Manufacturer

STMicroelectronics

Introduction

N-Channel MOSFET Transistor

Part of the SuperMESH series

Product Features and Performance

Drain to Source Voltage (Vdss): 600 V

Gate to Source Voltage (Vgs Max): ±30 V

On-State Resistance (Rds(on) Max): 8 Ω @ 700 mA, 10 V

Continuous Drain Current (Id) @ 25°C: 400 mA (Tc)

Input Capacitance (Ciss Max): 170 pF @ 25 V

Power Dissipation (Max): 3 W (Tc)

Operating Temperature Range: -55°C to 150°C (TJ)

Product Advantages

High voltage capability

Low on-state resistance

High power handling

Key Technical Parameters

Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)

FET Type: N-Channel

Threshold Voltage (Vgs(th) Max): 4.5 V @ 50 A

Drive Voltage (Max Rds On, Min Rds On): 10 V

Gate Charge (Qg Max): 10 nC @ 10 V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Mounting Type: Through Hole

Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Application Areas

Suitable for a wide range of power switching and control applications

Product Lifecycle

Active and available for purchase

No information on upcoming discontinuation or replacement models

Several Key Reasons to Choose This Product

High voltage handling capability

Low on-state resistance for efficient power conversion

High power dissipation capability

Suitable for various power electronics applications

RoHS3 compliant for environmental compliance