Manufacturer Part Number
STQ1NK80ZR-AP
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
N-Channel
TO-92-3 Package
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 800V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 16Ω @ 500mA, 10V
Current Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Power Dissipation (Max): 3W
Product Advantages
High voltage rating
Low on-resistance
Compact TO-92-3 package
Key Technical Parameters
Vgs(th) (Max) @ Id: 4.5V @ 50A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Through Hole Mounting
Application Areas
Suitable for various power switching applications
Product Lifecycle
Active product
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage capability
Low on-resistance
Compact package
Suitable for power switching applications
RoHS3 compliant
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