Manufacturer Part Number
STQ2HNK60ZR-AP
Manufacturer
STMicroelectronics
Introduction
High-voltage, low on-resistance N-channel SuperMESH MOSFET
Product Features and Performance
Low on-resistance for low conduction losses
High voltage capability up to 600V
Wide operating temperature range from -55°C to 150°C
Low gate charge for fast switching
Rugged and reliable design
Product Advantages
Excellent power efficiency
Suitable for high-voltage applications
Robust thermal performance
Fast and efficient switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.8Ω @ 1A, 10V
Continuous Drain Current (Id): 500mA @ 25°C
Input Capacitance (Ciss): 280pF @ 25V
Power Dissipation (Tc): 3W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Reliable and long-lasting performance
Compatibility
Compatible with a wide range of electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in active production
Replacement or upgrade options are available
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Suitable for high-voltage, high-power applications
Robust thermal performance and wide operating temperature range
Fast and efficient switching for improved system performance
Reliable and long-lasting design for improved system reliability
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