STP7N95K3 - STMicroelectronics

Manufacturer Part Number

STP7N95K3

Manufacturer

STMicroelectronics

Introduction

High-voltage, N-channel power MOSFET in a TO-220 package

Product Features and Performance

High drain-to-source breakdown voltage of 950V

Low on-resistance (RDS(on)) of 1.35Ω at 3.6A, 10V

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1031pF at 100V

Continuous drain current (ID) of 7.2A at 25°C

Product Advantages

Excellent high-voltage handling capability

Low power losses due to low on-resistance

Reliable operation across wide temperature range

Compact TO-220 package

Key Technical Parameters

Drain-to-Source Voltage (VDS): 950V

Gate-to-Source Voltage (VGS): ±30V

On-Resistance (RDS(on)): 1.35Ω at 3.6A, 10V

Continuous Drain Current (ID): 7.2A at 25°C

Input Capacitance (Ciss): 1031pF at 100V

Power Dissipation (PD): 150W at Tc

Quality and Safety Features

RoHS3 compliant

Housed in a reliable TO-220 package

Compatibility

Suitable for a variety of high-voltage, high-power applications

Application Areas

Suitable for use in power supplies, motor drives, and other high-voltage, high-power circuits

Product Lifecycle

This product is an active and widely used part in the STMicroelectronics portfolio

There are no plans for discontinuation, and replacement parts are readily available

Several Key Reasons to Choose This Product

Excellent high-voltage handling capability up to 950V

Low on-resistance for efficient power conversion

Wide operating temperature range for reliable operation

Compact and reliable TO-220 package

RoHS3 compliance for environmental responsibility

Readily available and actively supported by the manufacturer