Manufacturer Part Number
STP7N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
800V drain-source voltage
Low on-resistance of 1.2Ω at 3A, 10V
High current capability up to 6A (Tc)
Fast switching with low gate charge of 13.4nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
High efficiency and low power loss
Reliable and robust design
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 1.2Ω @ 3A, 10V
Continuous Drain Current (Id): 6A (Tc)
Input Capacitance (Ciss): 360pF @ 100V
Power Dissipation (Ptot): 110W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Through-hole TO-220 package
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial control systems
Medical equipment
Lighting ballasts
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if required
Key Reasons to Choose this Product
Excellent power handling and efficiency
Reliable and robust design for industrial applications
Wide operating temperature range and compatibility
Cost-effective solution for power conversion applications