Manufacturer Part Number
STP7N105K5
Manufacturer
STMicroelectronics
Introduction
High-voltage n-channel power MOSFET
Product Features and Performance
High drain-to-source voltage (1050V)
Low on-resistance (2Ω @ 2A, 10V)
High current capability (4A continuous @ 25°C)
Low gate charge (17nC @ 10V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Suitable for high-voltage, high-power applications
Low conduction losses
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1050V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 380pF @ 100V
Power Dissipation (Tc): 110W
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications
Compatibility
Through-hole mounting (TO-220 package)
Application Areas
High-voltage, high-power switching applications
Motor drives
Power supplies
Industrial electronics
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Reliable and robust design for demanding applications
Suitable for high-temperature environments
Compatibility with standard through-hole mounting