Manufacturer Part Number
STP6N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor designed for power conversion and control applications.
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance (RDS(on)) of 1.35Ω @ 2A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 226pF @ 100V
Continuous drain current of 4A at 25°C
Power dissipation up to 60W
Product Advantages
Excellent performance for power conversion and control
High efficiency and low power loss
Robust and reliable design for demanding applications
Compatibility with a wide range of systems and voltages
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
Threshold Voltage (Vgs(th)): 4V @ 250A
On-Resistance (RDS(on)): 1.35Ω @ 2A, 10V
Input Capacitance (Ciss): 226pF @ 100V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Safe and reliable operation in various applications
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various industrial, automotive, and consumer electronics systems
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial automation and control
Product Lifecycle
Currently in active production
No discontinuation or end-of-life plans announced
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High performance and efficiency for power conversion and control
Robust and reliable design for demanding applications
Wide operating temperature range and compatibility
Meets industry standards and regulations for quality and safety
Cost-effective solution for various power electronics applications
STP6N25STMicroelectronics