Manufacturer Part Number
STP6N80K5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
800V drain-source voltage
5A continuous drain current at 25°C
6Ω maximum on-resistance at 2A, 10V
255pF maximum input capacitance at 100V
85W maximum power dissipation at 25°C
Product Advantages
Robust design for reliable operation
Optimized for high-voltage, high-power applications
Suitable for various power conversion and control circuits
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): 30V
On-Resistance (Rds(on)): 1.6Ω
Drain Current (Id): 4.5A
Power Dissipation (Tc): 85W
Input Capacitance (Ciss): 255pF
Quality and Safety Features
RoHS3 compliant
TO-220 package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Industrial control systems
Automotive electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from STMicroelectronics
Key Reasons to Choose This Product
Excellent high-voltage, high-current performance
Robust and reliable design for demanding applications
Optimized for efficient power conversion and control
RoHS3 compliance for environmental friendliness
Widely compatible with various high-power electronics
