Manufacturer Part Number
STP6N120K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Designed for high-voltage, high-current switching and amplification applications
Product Features and Performance
Breakdown voltage (Vdss) of 1200V
On-state resistance (Rds(on)) as low as 2.4Ω
Continuous drain current (Id) of 6A at 25°C
Operating temperature range of -55°C to 150°C
High input capacitance (Ciss) of 1050pF
Power dissipation (Ptot) of 150W
Product Advantages
Excellent high-voltage and high-current performance
Low on-state resistance for efficient power switching
Wide operating temperature range
Reliable and robust design
Key Technical Parameters
Vdss: 1200V
Vgs(max): ±30V
Rds(on) (max): 2.4Ω
Id (max): 6A
Ciss (max): 1050pF
Ptot (max): 150W
Quality and Safety Features
RoHS3 compliant
Rugged TO-220 package
Compatibility
Suitable for high-voltage, high-current switching and amplification applications
Application Areas
Industrial power supplies
Motor drives
Inverters
Switched-mode power supplies
Product Lifecycle
Current production model
Replacement or upgrade options available
Several Key Reasons to Choose This Product
Excellent high-voltage and high-current performance
Low on-state resistance for efficient power switching
Wide operating temperature range
Reliable and robust design
RoHS3 compliance for environmental responsibility