Manufacturer Part Number
STP4N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
High breakdown voltage (800V)
Low on-resistance (2.5Ω @ 1.5A, 10V)
High current capability (3A @ 25°C)
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent performance-to-cost ratio
Suitable for high-voltage, high-power applications
Reliable and durable
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.5Ω @ 1.5A, 10V
Continuous Drain Current (Id): 3A @ 25°C
Input Capacitance (Ciss): 175pF @ 100V
Power Dissipation (Tc): 60W
Quality and Safety Features
RoHS3 compliant
Reliable and rugged design
Suitable for high-temperature operation
Compatibility
TO-220 package
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial controls
Automotive electronics
Product Lifecycle
Mature product, not nearing discontinuation
Replacements and upgrades available as needed
Key Reasons to Choose
Excellent performance-to-cost ratio
Reliable and durable design
Wide operating temperature range
Suitable for a variety of high-voltage, high-power applications