Manufacturer Part Number
STP4N150
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET transistor
Product Features and Performance
Designed for high-voltage, high-power applications
Capable of handling up to 1500V drain-to-source voltage
Supports continuous drain current up to 4A at 25°C
Low on-resistance of 7Ω at 2A, 10V
High input capacitance of 1300pF at 25V
Maximum power dissipation of 160W at case temperature
Product Advantages
High-voltage and high-power handling capabilities
Low on-resistance for efficient power delivery
Suitable for a wide range of high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1500V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 7Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 1300pF @ 25V
Maximum Power Dissipation: 160W @ Tc
Quality and Safety Features
ROHS3 compliant
Through-hole TO-220 package for reliable mounting
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Suitable for use in power supplies, motor drives, and other high-voltage power electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional high-voltage and high-power handling capabilities
Low on-resistance for efficient power delivery
Robust through-hole TO-220 package for reliable operation
Suitable for a wide range of high-voltage, high-power applications