Manufacturer Part Number
STP4N52K3
Manufacturer
STMicroelectronics
Introduction
Single N-Channel Power MOSFET with SuperMESH3 technology
Product Features and Performance
High voltage capability up to 525V
Low on-resistance of 2.6Ω
Low gate charge of 11nC
High current capability up to 2.5A
Product Advantages
Excellent power efficiency
High reliability
Robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 525V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.6Ω @ 1.25A, 10V
Continuous Drain Current (Id): 2.5A @ 25°C
Input Capacitance (Ciss): 334pF @ 100V
Power Dissipation (Ptot): 45W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220 package
Operating temperature up to 150°C
Compatibility
Compatible with various electronic circuits and power supply designs
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current and available for purchase
Replacement parts and upgrades may be available
Key Reasons to Choose
Excellent power efficiency and performance
High voltage and current capability
Robust and reliable design
Widespread compatibility and applications