Manufacturer Part Number
STP28NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET
Product Features and Performance
600V drain-source voltage
150°C maximum junction temperature
Low on-resistance of 150mΩ
High continuous drain current of 23A
Fast switching and low gate charge
Robust and reliable design
Product Advantages
Excellent power efficiency
High power density
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 150mΩ @ 11.5A, 10V
Continuous Drain Current (Id): 23A
Input Capacitance (Ciss): 2090pF @ 100V
Power Dissipation (Tc): 190W
Quality and Safety Features
RoHS3 compliant
Qualified to high-reliability standards
Compatibility
Through-hole mounting in TO-220 package
Application Areas
Switched-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current production, no discontinuation announced
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Robust and reliable design for high-voltage, high-power applications
Fast switching and low gate charge for efficient power conversion
Wide operating temperature range up to 150°C