Manufacturer Part Number
STP28NM50N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single N-Channel MOSFET Transistor
Product Features and Performance
RoHS3 Compliant
Operating Temperature: 150°C (TJ)
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Current Continuous Drain (Id) @ 25°C: 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Product Advantages
High Voltage Capability
Low On-State Resistance
High Current Handling Capability
Suitable for High Power Applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of power electronics and industrial applications
Application Areas
Switching Power Supplies
Motor Drives
Industrial Controls
Power Conversion Circuits
Product Lifecycle
This product is an active and widely available part from STMicroelectronics.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-state resistance for improved efficiency
Robust and reliable performance in demanding applications
Widely used and supported by STMicroelectronics
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