Manufacturer Part Number
STP28N60M2
Manufacturer
STMicroelectronics
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
Suitable for high-power switching applications
Excellent on-state resistance and fast switching speed
Robust and reliable design for industrial and automotive applications
Product Advantages
Low on-state resistance for high efficiency
High blocking voltage capability
Fast switching and low gate charge for high-speed switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-State Resistance (Rds(on)): 150mΩ @ 12A, 10V
Continuous Drain Current (Id): 24A @ 25°C (Tc)
Input Capacitance (Ciss): 1370pF @ 100V
Power Dissipation (Tc): 170W
Quality and Safety Features
ROHS3 compliant
Industrial and automotive grade quality
Compatibility
TO-220 package, through-hole mounting
Suitable for high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades available
Key Reasons to Choose
Excellent performance-to-cost ratio
Robust and reliable design for industrial/automotive use
Fast switching and low on-state resistance for high efficiency
High voltage and current handling capability