Manufacturer Part Number
STP165N10F4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-state resistance and fast switching speed. Designed for high-power, high-voltage switch-mode power conversion applications.
Product Features and Performance
N-channel MOSFET with low on-state resistance
Fast switching speed for improved efficiency
Optimized gate charge for efficient drive
Rugged design with high avalanche energy capability
Suitable for high-power, high-voltage switch-mode power conversion applications
Product Advantages
Improved power conversion efficiency
Reduced power losses
Enhanced system reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 100V
Gate-to-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 5.5mΩ @ 60A, 10V
Continuous Drain Current (Id): 120A @ 25°C (Tc)
Input Capacitance (Ciss): 10,500pF @ 25V
Power Dissipation (Pd): 315W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of high-power, high-voltage switch-mode power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Welding equipment
Renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent power conversion efficiency and low power losses
Fast switching speed for improved system performance
Rugged design with high avalanche energy capability
Optimized gate charge for efficient drive
Designed and manufactured to high quality standards