Manufacturer Part Number
STP15NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET for power switching applications
Product Features and Performance
600V drain-to-source voltage
Low on-resistance (299mΩ @ 7A, 10V)
Wide operating temperature range (-55°C to 150°C)
High current capability (14A continuous drain current @ 25°C)
Low gate charge (40nC @ 10V)
Fast switching speed
Product Advantages
Excellent power efficiency
Reliable and robust design
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 299mΩ @ 7A, 10V
Continuous Drain Current (Id): 14A @ 25°C
Input Capacitance (Ciss): 1250pF @ 50V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
TO-220 through-hole package
Suitable for a wide range of power electronics applications
Application Areas
Switchmode power supplies
Motor drives
Inverters
Converters
Industrial and consumer electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Robust and reliable design
Wide operating temperature range
High current capability
Fast switching speed
Suitable for a variety of power conversion applications