Manufacturer Part Number
STP160N75F3
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET with low RDS(on) and high current capability
Product Features and Performance
Low on-resistance (4 mΩ max. @ 60 A, 10 V)
High drain current (120 A @ 25°C)
High breakdown voltage (75 V)
Wide operating temperature range (-55°C to 175°C)
Fast switching and low gate charge (85 nC max. @ 10 V)
Product Advantages
Excellent thermal management
High efficiency and low power dissipation
Reliable and rugged design
Suitable for high-current, high-power applications
Key Technical Parameters
Drain-Source Voltage (VDS): 75 V
Gate-Source Voltage (VGS): ±20 V
On-Resistance (RDS(on)): 4 mΩ max. @ 60 A, 10 V
Drain Current (ID): 120 A @ 25°C
Input Capacitance (Ciss): 6750 pF max. @ 25 V
Power Dissipation (PD): 330 W
Quality and Safety Features
RoHS3 compliant
Sturdy TO-220 package
Compatibility
Suitable for a wide range of high-power, high-current applications
Application Areas
Motor drives
Power supplies
Inverters
Switching regulators
Industrial and automotive electronics
Product Lifecycle
Current product
Availability of replacements and upgrades
Key Reasons to Choose This Product
Exceptional performance with low RDS(on) and high current capability
Reliable and rugged design for demanding applications
Excellent thermal management for efficient operation
Wide operating temperature range
Suitable for high-power, high-current applications