Manufacturer Part Number
STL3N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET in PowerFlat (3.3x3.3) package
Product Features and Performance
650V drain-to-source voltage
8Ω on-resistance at 1A, 10V
3A continuous drain current at 25°C
155pF input capacitance at 100V
22W maximum power dissipation at Tc
Wide operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High voltage rating for various high-voltage applications
Small PowerFlat package for compact designs
Reliable performance over wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.8Ω @ 1A, 10V
Continuous Drain Current (Id): 2.3A @ 25°C
Input Capacitance (Ciss): 155pF @ 100V
Power Dissipation (Pd): 22W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable performance in high-temperature environments
Compatibility
Suitable for various high-voltage applications, such as switched-mode power supplies, motor drives, and industrial control systems
Application Areas
High-voltage power conversion
Motor control
Industrial electronics
Household appliances
Product Lifecycle
Current product, no plans for discontinuation
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
High voltage rating for versatile applications
Low on-resistance for efficient power conversion
Small package size for compact designs
Reliable performance over wide temperature range
Compliance with RoHS regulations for environmental safety