Manufacturer Part Number
STL36N60M6
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-efficiency N-channel MOSFET for power switching applications
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 110 mΩ
Continuous drain current of 25A at 25°C
Extremely low gate charge of 44.3 nC
Wide operating temperature range of -55°C to 150°C
Optimized for high-efficiency power conversion
Product Advantages
Excellent power efficiency
High-voltage operation
Compact surface-mount package
Reliable and durable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 110 mΩ
Continuous drain current (Id): 25A
Input capacitance (Ciss): 1960 pF
Power dissipation (Pd): 160W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Rigorous quality control and testing
Compatibility
Suitable for a wide range of power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently in production
No immediate plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Superior power efficiency and high-voltage operation
Compact and easy-to-integrate surface-mount package
Excellent reliability and long-term performance
Optimized for high-frequency, high-efficiency power conversion
Wide operating temperature range for versatile applications
