Manufacturer Part Number
STL3NM60N
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
PowerFlat (3.3x3.3) Packaging
MDmesh II Series
Tape & Reel Packaging
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 600V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 1.8Ω @ 1A, 10V
MOSFET (Metal Oxide) Technology
Current Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 188 pF @ 50V
Power Dissipation (Max): 2W (Ta), 22W (Tc)
N-Channel FET Type
Vgs(th) (Max) @ Id: 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10V
Surface Mount Mounting
Product Advantages
High voltage capability (600V)
Low on-resistance (1.8Ω)
High current handling (650mA/2.2A)
Compact PowerFlat (3.3x3.3) package
Wide temperature range (-55°C to 150°C)
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Rds On (Max) @ Id, Vgs: 1.8Ω @ 1A, 10V
Current Continuous Drain (Id) @ 25°C: 650mA (Ta), 2.2A (Tc)
Power Dissipation (Max): 2W (Ta), 22W (Tc)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with a wide range of electronic circuits and systems requiring high voltage, low on-resistance, and high current handling MOSFETs.
Application Areas
Suitable for use in power supplies, motor drives, lighting control, and other high-voltage, high-current applications.
Product Lifecycle
Currently available, no discontinuation information found.
Key Reasons to Choose This Product
High voltage capability (600V)
Low on-resistance (1.8Ω)
High current handling (650mA/2.2A)
Compact PowerFlat (3.3x3.3) package
Wide temperature range (-55°C to 150°C)
RoHS3 compliance for environmental sustainability