Manufacturer Part Number
STL2N80K5
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
800 V Drain to Source Voltage
±30 V Gate to Source Voltage
9 Ohm Drain-Source On-Resistance @ 1 A, 10 V
2 A Continuous Drain Current @ 25°C
95 pF Input Capacitance @ 100 V
33 W Power Dissipation @ Tc
5 V Gate Threshold Voltage @ 100 A
10 V Drive Voltage Range
3 nC Gate Charge @ 10 V
Product Advantages
High voltage and low on-resistance
Suitable for high-power switching applications
Robust design for reliable operation
Key Technical Parameters
Drain to Source Voltage: 800 V
Gate to Source Voltage: ±30 V
Drain-Source On-Resistance: 4.9 Ohm
Continuous Drain Current: 2 A @ 25°C
Input Capacitance: 95 pF @ 100 V
Power Dissipation: 33 W @ Tc
Gate Threshold Voltage: 5 V @ 100 A
Gate Charge: 3 nC @ 10 V
Quality and Safety Features
RoHS3 Compliant
PowerFlat (5x6) package
Surface Mount Mounting
Compatibility
Compatible with a wide range of high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Lighting ballasts
Home appliances
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements and upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
High voltage and low on-resistance for efficient power switching
Robust design for reliable operation in demanding applications
Compact and easy-to-use surface mount package
Broad compatibility with various high-power switching applications
Compliance with RoHS3 environmental regulations
