Manufacturer Part Number
STL26NM60N
Manufacturer
STMicroelectronics
Introduction
N-channel MOSFET power transistor
Designed for high-voltage, high-power switching applications
Product Features and Performance
Drain-source voltage (Vdss) of 600V
Continuous drain current (Id) of 2.7A at 25°C ambient, 19A at 25°C case temperature
On-resistance (Rds(on)) of 185mΩ at 10A, 10V
Input capacitance (Ciss) of 1800pF at 50V
Power dissipation of 125mW at 25°C ambient, 3W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High-voltage, high-power capability
Low on-resistance for low conduction losses
Compact PowerFlat (8x8) HV package
Key Technical Parameters
Vdss: 600V
Id: 2.7A (Ta), 19A (Tc)
Rds(on): 185mΩ @ 10A, 10V
Ciss: 1800pF @ 50V
Tj(max): 150°C
Quality and Safety Features
RoHS3 compliant
Adheres to quality and safety standards
Compatibility
Suitable for high-voltage, high-power switching applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
This product is an active and available part from STMicroelectronics.
Replacement or upgrade options may be available; check with the manufacturer for the latest information.
Key Reasons to Choose This Product
High-voltage, high-power capability
Low on-resistance for efficient operation
Compact and reliable PowerFlat package
Compliance with quality and safety standards
Suitability for a wide range of high-power switching applications
