STL28N60DM2 - STMicroelectronics

Manufacturer Part Number

STL28N60DM2

Manufacturer

STMicroelectronics

Introduction

High-voltage N-channel power MOSFET in PowerFlat (8x8) HV package

Product Features and Performance

600V drain-to-source voltage

Low on-resistance of 175mΩ @ 10.5A, 10V

Capable of 21A continuous drain current at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 1500pF @ 100V

Maximum power dissipation of 140W at case temperature

Product Advantages

Excellent performance for high-voltage, high-power applications

Compact and efficient PowerFlat (8x8) HV package

Reliable MOSFET technology from a trusted manufacturer

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±25V

On-Resistance (Rds(on)): 175mΩ @ 10.5A, 10V

Continuous Drain Current (Id): 21A @ 25°C

Input Capacitance (Ciss): 1500pF @ 100V

Power Dissipation (Pd): 140W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for high-voltage, high-power applications

Compatibility

Compatible with a wide range of high-voltage, high-power circuits and systems

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Automotive electronics

Product Lifecycle

Current product, not nearing discontinuation

Replacements and upgrades may be available from the manufacturer

Key Reasons to Choose This Product

Excellent performance in high-voltage, high-power applications

Compact and efficient PowerFlat (8x8) HV package

Reliable MOSFET technology from a trusted manufacturer

Wide operating temperature range and high power dissipation

RoHS3 compliance for environmental responsibility