Manufacturer Part Number
STL24N65M2
Manufacturer
STMicroelectronics
Introduction
High voltage N-channel MOSFET in PowerFlat (8x8) HV package
Product Features and Performance
650V drain-source voltage
250mΩ max on-resistance at 7A, 10V
14A continuous drain current at 25°C case temperature
Low gate charge of 29nC at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power conversion
Compact design with high power density
Suitable for high voltage, high power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 250mΩ @ 7A, 10V
Drain Current (Id): 14A @ 25°C case temperature
Input Capacitance (Ciss): 1060pF @ 100V
Power Dissipation (Tc): 125W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety in demanding applications
Compatibility
Suitable for a wide range of high voltage, high power applications such as:
Switched-mode power supplies
Motor drives
Inverters
Power amplifiers
Application Areas
Industrial
Automotive
Telecommunications
Aerospace and defense
Product Lifecycle
The STL24N65M2 is an active and widely available product. Replacements and upgrades may be available from STMicroelectronics or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency with low on-resistance and gate charge
Robust and reliable design suitable for demanding high voltage, high power applications
Compact PowerFlat (8x8) HV package for high power density
Wide operating temperature range for versatile use
RoHS3 compliance for environmental sustainability
STL25N15F4STMicroelectronicsMOSFET N-CH 150V 25A POWERFLAT