Manufacturer Part Number
STL23NM60ND
Manufacturer
STMicroelectronics
Introduction
Discrete semiconductor product
Single transistor MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Product Features and Performance
N-Channel MOSFET
600V drain-source voltage
180mΩ maximum on-resistance at 10A, 10V
5A continuous drain current at 25°C
2050pF maximum input capacitance at 50V
3W maximum power dissipation at 25°C, 150W at 100°C
±25V maximum gate-source voltage
70nC maximum gate charge at 10V
150°C maximum junction temperature
Product Advantages
Low on-resistance for improved efficiency
High voltage capability
Surface mount package for compact designs
Part of the FDmesh II series for improved performance
Key Technical Parameters
Drain-source voltage: 600V
Gate-source voltage: ±25V
On-resistance: 180mΩ
Continuous drain current: 19.5A
Input capacitance: 2050pF
Power dissipation: 3W (at 25°C), 150W (at 100°C)
Quality and Safety Features
RoHS3 compliant
Suitable for high temperature applications up to 150°C
Compatibility
Surface mount 8-PowerVDFN package
Application Areas
High-voltage power conversion
Switching power supplies
Motor drives
Industrial electronics
Product Lifecycle
Current product, no known plans for discontinuation
Replacements and upgrades may be available within the FDmesh II series
Key Reasons to Choose
Excellent performance in terms of low on-resistance and high voltage capability
Compact surface mount package for space-constrained designs
Part of the FDmesh II series for improved efficiency and reliability
RoHS3 compliance for use in a wide range of applications
