Manufacturer Part Number
STL24N60M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET
Product Features and Performance
600V drain-source voltage
210mΩ maximum on-resistance
18A continuous drain current
125W maximum power dissipation
Wide operating temperature range up to 150°C
Low input capacitance of 1060pF
Low gate charge of 29nC
Product Advantages
Improved efficiency and thermal management
Reduced switching and conduction losses
Compact and optimized package design
Key Technical Parameters
Drain-source voltage (Vdss): 600V
Gate-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 210mΩ
Drain current (Id): 18A
Input capacitance (Ciss): 1060pF
Power dissipation (Ptot): 125W
Operating temperature (Tj): 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for a wide range of high-voltage power conversion applications
Application Areas
Switched-mode power supplies
Motor drives
Lighting ballasts
Industrial and consumer electronics
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Compact and optimized package design
Reliable and robust construction
Suitable for a wide range of high-voltage applications
