Manufacturer Part Number
STI33N60M2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh II Plus technology
Product Features and Performance
Optimized for high efficiency and high power density
Very low on-resistance for low conduction losses
Extremely fast switching speed for high-frequency operation
Excellent avalanche ruggedness and SOA (Safe Operating Area)
Suitable for high-frequency, high-efficiency switching applications
Product Advantages
Improved energy efficiency
Reduced power losses
High frequency capability
Superior robustness and reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 125mΩ @ 13A, 10V
Continuous Drain Current (Id): 26A @ 25°C (Tc)
Input Capacitance (Ciss): 1781pF @ 100V
Power Dissipation (Ptot): 190W @ 25°C (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Robust design for enhanced safety and stability
Compatibility
Compatible with various high-frequency, high-efficiency switching applications
Application Areas
Switch-mode power supplies (SMPS)
Power inverters
Motor drives
Induction heating
Lighting ballasts
Product Lifecycle
Current production
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
High switching speed for high-frequency operation
Robust design for enhanced reliability and safety
Suitable for a wide range of high-power, high-efficiency applications
Availability of replacements and upgrades ensures long-term support
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