Manufacturer Part Number
STI24NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching capabilities.
Product Features and Performance
600V drain-to-source voltage
190mΩ maximum on-resistance at 8A, 10V
17A continuous drain current at 25°C
1400pF maximum input capacitance at 50V
125W maximum power dissipation
Fast switching with 46nC maximum gate charge at 10V
Product Advantages
Low on-resistance for high efficiency
High voltage handling capability
Fast switching for improved system performance
Excellent thermal management
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 190mΩ @ 8A, 10V
Drain Current (Id): 17A @ 25°C
Input Capacitance (Ciss): 1400pF @ 50V
Power Dissipation (Ptot): 125W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic systems and power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Fast switching for improved system response
Reliable and durable design for long-term use
STI23NM60ND MOSSTMicroelectronics