STI24NM60N - STMicroelectronics

Manufacturer Part Number

STI24NM60N

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET with low on-resistance and fast switching capabilities.

Product Features and Performance

600V drain-to-source voltage

190mΩ maximum on-resistance at 8A, 10V

17A continuous drain current at 25°C

1400pF maximum input capacitance at 50V

125W maximum power dissipation

Fast switching with 46nC maximum gate charge at 10V

Product Advantages

Low on-resistance for high efficiency

High voltage handling capability

Fast switching for improved system performance

Excellent thermal management

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 190mΩ @ 8A, 10V

Drain Current (Id): 17A @ 25°C

Input Capacitance (Ciss): 1400pF @ 50V

Power Dissipation (Ptot): 125W @ Tc

Quality and Safety Features

RoHS3 compliant

Suitable for high-reliability applications

Compatibility

Compatible with a wide range of electronic systems and power conversion applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current product offering

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

High voltage and current handling capabilities

Low on-resistance for efficient power conversion

Fast switching for improved system response

Reliable and durable design for long-term use