Manufacturer Part Number
STI24N60M2
Manufacturer
STMicroelectronics
Introduction
The STI24N60M2 is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
N-Channel MOSFET transistor
600V drain-to-source voltage
Maximum gate-to-source voltage of ±25V
Low on-resistance of 190mOhm @ 9A, 10V
Continuous drain current of 18A at 25°C case temperature
Input capacitance of 1060pF @ 100V
Maximum power dissipation of 150W at 25°C case temperature
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Reliable performance in various applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs Max): ±25V
On-Resistance (Rds(on) Max): 190mOhm @ 9A, 10V
Continuous Drain Current (Id): 18A @ 25°C
Input Capacitance (Ciss Max): 1060pF @ 100V
Power Dissipation (Max): 150W @ 25°C
Quality and Safety Features
RoHS3 compliant
Packaged in a TO-262-3 (I2PAK) long leads package
Compatibility
Suitable for use in various power electronics, industrial, and consumer applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and available
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Reliable performance in various applications
RoHS3 compliance for environmental responsibility
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