Manufacturer Part Number
STF9N60M2
Manufacturer
STMicroelectronics
Introduction
The STF9N60M2 is a high-performance N-channel power MOSFET from STMicroelectronics, part of the MDmesh II Plus series.
Product Features and Performance
600V drain-source voltage
5A continuous drain current at 25°C
780mΩ maximum on-resistance at 3A, 10V
320pF maximum input capacitance at 100V
20W maximum power dissipation at Tc
Product Advantages
High voltage and current handling capabilities
Low on-resistance for improved efficiency
Fast switching and low gate charge for high-frequency applications
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 780mΩ @ 3A, 10V
Drain Current (Id): 5.5A (Tc)
Input Capacitance (Ciss): 320pF @ 100V
Power Dissipation (Pd): 20W (Tc)
Quality and Safety Features
RoHS3 compliant
TO-220FP package for secure mounting and heat dissipation
Compatibility
Suitable for a wide range of power conversion, motor control, and switching applications.
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial controls
Product Lifecycle
The STF9N60M2 is an active product, with no indication of discontinuation. Upgrades and replacements may be available from STMicroelectronics in the future.
Key Reasons to Choose This Product
High voltage and current capability for demanding applications
Low on-resistance for improved efficiency
Fast switching and low gate charge for high-frequency operation
Robust design and RoHS3 compliance for reliability and safety
Compatibility with a wide range of power electronics applications
STF9N60M3STMicroelectronics
STF90-3157STF