Manufacturer Part Number
STF9NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Part of the MDmesh II series
Product Features and Performance
Supports high drain-to-source voltage up to 600V
Wide operating temperature range up to 150°C
Low on-resistance (RDS(on)) of 745mΩ
High continuous drain current of 6.5A at 25°C
Product Advantages
Excellent efficiency and power density
Robust design for demanding applications
Optimized for high-frequency and high-voltage switching
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 745mΩ @ 3.25A, 10V
Drain Current (ID): 6.5A (Tc)
Input Capacitance (Ciss): 452pF @ 50V
Power Dissipation (Pd): 25W (Tc)
Quality and Safety Features
Compliant with RoHS3 directive
TO-220FP package for reliable thermal performance
Compatibility
Suitable for high-frequency, high-voltage switching applications
Application Areas
Power supplies
Motor drives
Lighting ballasts
Induction heating
Industrial electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from STMicroelectronics
Key Reasons to Choose This Product
Excellent power handling capability
High efficiency and power density
Robust and reliable operation
Optimized for high-frequency, high-voltage switching
Wide operating temperature range
RoHS3 compliance for environmental safety
STFI13N60M2STMicroelectronicsMOSFET N-CH 600V 11A I2PAKFP