Manufacturer Part Number
STF8NM50N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor suitable for a wide range of power switching applications.
Product Features and Performance
High drain-to-source breakdown voltage of 500V
Low on-resistance of 790mOhm @ 2.5A, 10V
High continuous drain current of 5A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching with low gate charge of 14nC @ 10V
Robust and reliable design for demanding applications
Product Advantages
Excellent power efficiency and low power loss
Compact and cost-effective solution
Suitable for high-voltage, high-current applications
Reliable performance across wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 790mOhm @ 2.5A, 10V
Continuous Drain Current (Id): 5A @ 25°C
Input Capacitance (Ciss): 364pF @ 50V
Power Dissipation (Ptot): 20W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments
Robust and reliable design for long-term performance
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial controls
Automotive electronics
Renewable energy systems
Product Lifecycle
This product is currently in production and widely available
No plans for discontinuation at this time
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High performance and efficiency
Robust and reliable design
Wide operating temperature range
Cost-effective solution for high-voltage, high-current applications
Suitable for a variety of power electronics systems
STF9N60STMicroelectronics
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