Manufacturer Part Number
STF6N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET with advanced MDmesh V technology for efficient power conversion applications.
Product Features and Performance
High breakdown voltage of 650V
Low on-resistance of 1.35Ω @ 2A, 10V
Low input capacitance of 226pF @ 100V
High continuous drain current of 4A at 25°C
Wide operating temperature range of -55°C to 150°C
Advanced MDmesh V technology for improved switching performance
Product Advantages
Excellent efficiency in power conversion applications
High reliability and ruggedness
Reduced power losses and heat dissipation
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 1.35Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 226pF @ 100V
Power Dissipation (Pd): 20W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-220FP package for reliable operation
Compatibility
This MOSFET is suitable for a wide range of power conversion applications, including:
Switching power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control systems
Application Areas
Power conversion
Industrial electronics
Automotive electronics
Home appliances
Product Lifecycle
The STF6N65M2 is an actively supported product in the STMicroelectronics portfolio. No discontinuation is planned, and replacements or upgrades are available as needed.
Key Reasons to Choose This Product
High efficiency and low power losses due to advanced MDmesh V technology
Excellent reliability and ruggedness for demanding applications
Wide operating temperature range for versatile use
Compatibility with a broad range of power conversion applications
Availability of replacement and upgrade options for long-term product support
STF6NK50ZSTMicroelectronics