Manufacturer Part Number
STF6N65K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with SuperMESH3 technology
Product Features and Performance
Drain-to-Source Voltage (Vdss): 650V
Maximum Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.3Ω @ 2.8A, 10V
Continuous Drain Current (Id): 5.4A @ 25°C (Tc)
Input Capacitance (Ciss): 880pF @ 50V
Power Dissipation (Tc): 30W
Gate Charge (Qg): 35nC @ 10V
Product Advantages
High voltage handling capability
Low on-state resistance for improved efficiency
Compact TO-220FP package
Key Technical Parameters
MOSFET technology
N-channel
Threshold Voltage (Vgs(th)): 4.5V @ 50A
Operating Temperature: 150°C (TJ)
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Lighting control
Appliances
Product Lifecycle
Currently available
No known discontinuation plans
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Reliable and efficient power switching
Versatile application potential
Compliance with environmental regulations