Manufacturer Part Number
STF6N62K3
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Suitable for high-voltage, high-power switching applications
Product Features and Performance
Drain-to-Source Voltage (Vdss): 620V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.28Ω @ 2.8A, 10V
Continuous Drain Current (Id): 5.5A @ 25°C (Tc)
Input Capacitance (Ciss): 875pF @ 50V
Power Dissipation (Pd): 30W (Tc)
Fast Switching Capability
Low Gate Charge (Qg): 34nC @ 10V
Product Advantages
High voltage and current handling capability
Low on-state resistance for high efficiency
Fast switching for high-frequency applications
Robust and reliable performance
Key Technical Parameters
MOSFET Technology: N-Channel
Threshold Voltage (Vgs(th)): 4.5V @ 50A
Drive Voltage (Vgs): 10V
Operating Temperature Range: -55°C to 150°C (Tj)
Quality and Safety Features
RoHS3 Compliant
Reliable and durable design
Compatibility
Through-hole mounting (TO-220FP package)
Compatible with various high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional voltage and current handling
Low on-state resistance for high efficiency
Fast switching capabilities for high-frequency applications
Robust and reliable performance in demanding environments
RoHS3 compliance for environmental responsibility
STF6N60STMicroelectronics
STF6A60SEMIWELL