Manufacturer Part Number
STF4LN80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
800V drain-source voltage rating
Ultra-low RDS(on) for high efficiency
Fast switching capabilities
High avalanche capability
Very low gate charge for high-frequency applications
Product Advantages
Excellent power efficiency
Reliable high-voltage operation
Suitable for high-frequency switching applications
Robust avalanche capability
Key Technical Parameters
Drain-source voltage (VDS): 800V
Gate-source voltage (VGS): ±30V
On-state resistance (RDS(on)): 2.6Ω @ 1A, 10V
Drain current (ID): 3A @ 25°C
Input capacitance (Ciss): 122pF @ 100V
Power dissipation: 20W @ 25°C
Quality and Safety Features
RoHS3 compliant
Reliable TO-220FP package
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial control systems
Product Lifecycle
Currently available, no known discontinuation plans
Several Key Reasons to Choose This Product
Excellent power efficiency due to ultra-low RDS(on)
Reliable high-voltage operation with 800V rating
Suitable for high-frequency switching applications
Robust avalanche capability for enhanced reliability
RoHS3 compliant for environmental compliance