Manufacturer Part Number
STF42N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET
Product Features and Performance
650V Drain to Source Voltage (Vdss)
33A Continuous Drain Current (Id) at 25°C
79mΩ Maximum On-State Resistance (Rds(on))
4650pF Maximum Input Capacitance (Ciss)
40W Maximum Power Dissipation
150°C Maximum Junction Temperature (Tj)
Product Advantages
Low on-state resistance for low conduction losses
High voltage handling capability
Robust design for reliable operation
Optimized for high-efficiency power conversion applications
Key Technical Parameters
Vdss: 650V
Vgs (Max): ±25V
Rds(on) (Max) @ Id, Vgs: 79mΩ @ 16.5A, 10V
Current Continuous Drain (Id) @ 25°C: 33A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4650pF @ 100V
Power Dissipation (Max): 40W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for industrial and automotive applications
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
Currently available
No known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state resistance for efficient power conversion
Robust design for reliable operation in harsh environments
Optimized for high-efficiency power conversion applications
Compatibility with a wide range of industrial and automotive applications