Manufacturer Part Number
STF45N65M5
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
650V Drain-Source Voltage
35A Continuous Drain Current
78mΩ On-Resistance
3375pF Input Capacitance
91nC Gate Charge
40W Power Dissipation
150°C Junction Temperature
Product Advantages
High Voltage and Current Capability
Low On-Resistance
Compact TO-220 Package
Key Technical Parameters
Vdss: 650V
Vgs (Max): ±25V
Rds On (Max): 78mΩ
Id (Tc): 35A
Ciss (Max): 3375pF
Power Dissipation (Max): 40W
Quality and Safety Features
RoHS3 Compliant
Suitable for High-Power Applications
Compatibility
TO-220-3 Full Pack Package
Tube Packaging
Application Areas
Switching Power Supplies
Motor Drives
Industrial Controls
Lighting Applications
Product Lifecycle
Currently Available
No Discontinuation or Replacement Planned
Key Reasons to Choose This Product
High Voltage and Current Capability
Low On-Resistance for Efficient Power Conversion
Compact TO-220 Package for Space-Constrained Designs
RoHS3 Compliance for Environmental Responsibility
Proven Reliability and Performance in Industrial Applications